Infineon Technologies AG has announced that it has successfully processed 300-millimeter silicon carbide (SiC) wafers into functional power devices at its fab in Villach, Austria. The German chipmaker says it is the first company to achieve this in a full-scale semiconductor fab environment, and it managed the feat by using existing silicon manufacturing equipment.

The company will present the first processed 300-millimeter SiC wafer to the public at the electronica trade show, which begins 10 November 2026 in Munich.

A breakthrough in wafer economics

According to Infineon, chip production on 300-millimeter wafers is technologically more advanced and significantly more efficient than on 200-millimeter wafers, since the larger wafer diameter offers 2.3 times more chips per wafer.

The company describes the achievement as an early demonstration of the potential for the future full-scale industrialization of SiC on 300-millimeter wafers.

Jochen Hanebeck, CEO of Infineon Technologies, framed the development as a continuation of the company's push in wide-bandgap technologies.

"This technological milestone further strengthens our leadership in power systems. Congratulations and thank you to our passionate team, making significant progress in bringing 300-millimeter SiC out of the lab into a manufacturing environment," he said.

"Leadership in power semiconductors means continuously pushing technology to the next level. With silicon, gallium nitride, and now silicon carbide 300-millimeter wafers, we are in a leading position to scale semiconductor manufacturing and drive profitable growth."

Supply strategy and roadmap timing

Infineon says the 300-millimeter SiC process feasibility lays the foundation for a secure, future-proof SiC supply for customers in automotive, renewable energy, industrial, and AI data center applications. However, the company has not committed to a production timeline.

It states that it will plan the 300-millimeter SiC technology and ramp timing in close collaboration with its customers and partners, while continuing to execute on its existing 200-millimeter SiC manufacturing roadmap. Advanced SiC power technology, the company says, provides customers with a cost-effective and secure supply base across those same end markets.

The milestone also reflects Infineon's stated focus on providing customers with a comprehensive portfolio of high-performance SiC power semiconductors and ensuring long-term supply.

Why silicon carbide matters

Silicon carbide is described by Infineon as a key semiconductor material for highly efficient power conversion. Its material properties enable lower power loss, higher power density, and efficient operation at high voltages and temperatures.

The company cites traction inverters, on-board chargers, EV chargers, large-scale energy storage, industrial drives, and uninterruptible power supplies as example applications.

Demand is also rising in AI data centers, where Infineon notes new roles for SiC in solid-state transformers, circuit breakers, and power supply units. The company addresses these applications with its CoolSiC portfolio.

Parallel advance: Cold Split feasibility at Dresden

Alongside the 300-millimeter milestone, Infineon reports that it has proven the feasibility of its Cold Split technology with 300-millimeter SiC at its Dresden, Germany site.

Cold Split separates wafers from a SiC boule with less material loss and substantially reduced processing time compared with conventional wire sawing, meaning more wafers can be obtained from the same crystal.

The announcement did not elaborate on when Cold Split might move into volume production, but the technique is positioned as a complement to the company's larger-wafer ambitions by improving material yield from each SiC crystal.

A competitive signal for the power semiconductor market

The announcement underscores Infineon's positioning in power semiconductors and wide-bandgap technologies, a field where wafer size transitions are closely watched as a proxy for cost competitiveness and manufacturing scale.

By claiming the first functional power devices on 300-millimeter SiC processed in a full-scale fab environment and by achieving it on existing silicon manufacturing equipment, Infineon is signaling that it sees a path to scaling SiC production without an entirely new equipment base.

For now, the company's commercial SiC output remains anchored in its 200-millimeter roadmap, with the 300-millimeter ramp to be scheduled with customers and partners.

The public unveiling of the first processed 300-millimeter SiC wafer at electronica in Munich starting 10 November 2026 gives the company a showcase for the achievement as it seeks to reinforce its standing among automotive, industrial, renewable energy, and AI data center customers.

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